CSD86356Q5DT

Manufacturer :

Texas Instruments

Product Category :

Transistors - FETs, MOSFETs - Arrays

Current - Continuous Drain (Id) @ 25°C :

40A (Ta)

Drain to Source Voltage (Vdss) :

25V

FET Feature :

Logic Level Gate, 5V Drive

FET Type :

2 N-Channel (Half Bridge)

Gate Charge (Qg) (Max) @ Vgs :

7.9nC @ 4.5V, 19.3nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds :

1.04nF @ 12.5V, 2.51nF @ 12.5V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

8-PowerTDFN

Packaging :

Cut Tape (CT)

Part Status :

Active

Power - Max :

12W (Ta)

Rds On (Max) @ Id, Vgs :

4.5 mOhm @ 20A, 5V, 0.8 mOhm @ 20A, 5V

Series :

NexFET™

Supplier Device Package :

8-VSON-CLIP (5x6)

Vgs(th) (Max) @ Id :

1.85V @ 250µA, 1.5V @ 250µA