RN1106MFV,L3F

MANUFACTURER
Toshiba Semiconductor and Storage
PRODUCT CATEGORY
Transistors - Bipolar (BJT) - Single, Pre-Biased
Description
TRANS PREBIAS NPN
Per Unit
$0.02

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35% - we order from stocking distributor
17% - OEM excess
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TOTAL      $0.02
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Manufacturer :
Toshiba Semiconductor and Storage
Product Category :
Transistors - Bipolar (BJT) - Single, Pre-Biased
Current - Collector (Ic) (Max) :
100mA
Current - Collector Cutoff (Max) :
500nA
DC Current Gain (hFE) (Min) @ Ic, Vce :
80 @ 10mA, 5V
Frequency - Transition :
-
Mounting Type :
Surface Mount
Package / Case :
SOT-723
Packaging :
Tape & Reel (TR)
Part Status :
Active
Power - Max :
150mW
Resistor - Base (R1) :
4.7 kOhms
Resistor - Emitter Base (R2) :
47 kOhms
Series :
-
Supplier Device Package :
VESM
Transistor Type :
NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic :
300mV @ 500µA, 5mA
Voltage - Collector Emitter Breakdown (Max) :
50V
Datasheet :
RN1106MFV,L3F

Cross References

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