SSM3J112TU,LF

Manufacturer :

Toshiba Semiconductor and Storage

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

1.1A (Ta)

Drain to Source Voltage (Vdss) :

30V

Drive Voltage (Max Rds On, Min Rds On) :

4V, 10V

FET Feature :

-

FET Type :

P-Channel

Gate Charge (Qg) (Max) @ Vgs :

-

Input Capacitance (Ciss) (Max) @ Vds :

86pF @ 15V

Mounting Type :

Surface Mount

Operating Temperature :

150°C

Package / Case :

3-SMD, Flat Leads

Packaging :

Tape & Reel (TR)

Part Status :

Active

Power Dissipation (Max) :

800mW (Ta)

Rds On (Max) @ Id, Vgs :

390 mOhm @ 500mA, 10V

Series :

-

Supplier Device Package :

UFM

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

1.8V @ 100µA