SSM3J35CTC,L3F

Manufacturer :

Toshiba Semiconductor and Storage

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

250mA (Ta)

Drain to Source Voltage (Vdss) :

20V

Drive Voltage (Max Rds On, Min Rds On) :

1.2V, 4.5V

FET Feature :

-

FET Type :

P-Channel

Gate Charge (Qg) (Max) @ Vgs :

-

Input Capacitance (Ciss) (Max) @ Vds :

42pF @ 10V

Mounting Type :

Surface Mount

Operating Temperature :

150°C (TJ)

Package / Case :

SOT-1123

Packaging :

Cut Tape (CT)

Part Status :

Active

Power Dissipation (Max) :

500mW (Ta)

Rds On (Max) @ Id, Vgs :

1.4 Ohm @ 150mA, 4.5V

Series :

U-MOSVII

Supplier Device Package :

CST3C

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±10V

Vgs(th) (Max) @ Id :

1V @ 100µA