SSM5G10TU(TE85L,F)

Manufacturer :

Toshiba Semiconductor and Storage

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

1.5A (Ta)

Drain to Source Voltage (Vdss) :

20V

Drive Voltage (Max Rds On, Min Rds On) :

1.8V, 4V

FET Feature :

Schottky Diode (Isolated)

FET Type :

P-Channel

Gate Charge (Qg) (Max) @ Vgs :

6.4nC @ 4V

Input Capacitance (Ciss) (Max) @ Vds :

250pF @ 10V

Mounting Type :

Surface Mount

Operating Temperature :

150°C (TJ)

Package / Case :

6-SMD (5 Leads), Flat Lead

Packaging :

Cut Tape (CT)

Part Status :

Obsolete

Power Dissipation (Max) :

500mW (Ta)

Rds On (Max) @ Id, Vgs :

213 mOhm @ 1A, 4V

Series :

U-MOSIII

Supplier Device Package :

UFV

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±8V

Vgs(th) (Max) @ Id :

1V @ 1mA