SSM6J51TUTE85LF

Manufacturer :

Toshiba Semiconductor and Storage

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

4A (Ta)

Drain to Source Voltage (Vdss) :

12V

Drive Voltage (Max Rds On, Min Rds On) :

1.5V, 2.5V

FET Feature :

-

FET Type :

P-Channel

Gate Charge (Qg) (Max) @ Vgs :

-

Input Capacitance (Ciss) (Max) @ Vds :

1700pF @ 10V

Mounting Type :

Surface Mount

Operating Temperature :

150°C (TJ)

Package / Case :

6-SMD, Flat Leads

Packaging :

Cut Tape (CT)

Part Status :

Discontinued at Digi-Key

Power Dissipation (Max) :

500mW (Ta)

Rds On (Max) @ Id, Vgs :

54 mOhm @ 2A, 2.5V

Series :

U-MOSIV

Supplier Device Package :

UF6

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±8V

Vgs(th) (Max) @ Id :

1V @ 1mA