TPC6104(TE85L,F,M)

Manufacturer :

Toshiba Semiconductor and Storage

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

5.5A (Ta)

Drain to Source Voltage (Vdss) :

20V

Drive Voltage (Max Rds On, Min Rds On) :

1.8V, 4.5V

FET Feature :

-

FET Type :

P-Channel

Gate Charge (Qg) (Max) @ Vgs :

19nC @ 5V

Input Capacitance (Ciss) (Max) @ Vds :

1430pF @ 10V

Mounting Type :

Surface Mount

Operating Temperature :

150°C (TJ)

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Packaging :

Tape & Reel (TR)

Part Status :

Obsolete

Power Dissipation (Max) :

700mW (Ta)

Rds On (Max) @ Id, Vgs :

40 mOhm @ 2.8A, 4.5V

Series :

U-MOSIII

Supplier Device Package :

VS-6 (2.9x2.8)

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±8V

Vgs(th) (Max) @ Id :

1.2V @ 200µA