TPC8211(TE12L,Q,M)

Manufacturer :

Toshiba Semiconductor and Storage

Product Category :

Transistors - FETs, MOSFETs - Arrays

Current - Continuous Drain (Id) @ 25°C :

5.5A

Drain to Source Voltage (Vdss) :

30V

FET Feature :

Logic Level Gate

FET Type :

2 N-Channel (Dual)

Gate Charge (Qg) (Max) @ Vgs :

25nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

1250pF @ 10V

Mounting Type :

Surface Mount

Operating Temperature :

150°C (TJ)

Package / Case :

8-SOIC (0.173", 4.40mm Width)

Packaging :

Tape & Reel (TR)

Part Status :

Obsolete

Power - Max :

450mW

Rds On (Max) @ Id, Vgs :

36 mOhm @ 3A, 10V

Series :

-

Supplier Device Package :

8-SOP (5.5x6.0)

Vgs(th) (Max) @ Id :

2.5V @ 1mA