TPCC8002-H(TE12L,Q

Manufacturer :

Toshiba Semiconductor and Storage

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

22A (Ta)

Drain to Source Voltage (Vdss) :

30V

Drive Voltage (Max Rds On, Min Rds On) :

4.5V, 10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

27nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

2500pF @ 10V

Mounting Type :

Surface Mount

Operating Temperature :

150°C (TJ)

Package / Case :

8-PowerVDFN

Packaging :

Cut Tape (CT)

Part Status :

Obsolete

Power Dissipation (Max) :

700mW (Ta), 30W (Tc)

Rds On (Max) @ Id, Vgs :

8.3 mOhm @ 11A, 10V

Series :

U-MOSV-H

Supplier Device Package :

8-TSON Advance (3.3x3.3)

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

2.5V @ 1mA