TPH1110ENH,L1Q

Manufacturer :

Toshiba Semiconductor and Storage

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

7.2A (Ta)

Drain to Source Voltage (Vdss) :

200V

Drive Voltage (Max Rds On, Min Rds On) :

10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

7nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

600pF @ 100V

Mounting Type :

Surface Mount

Operating Temperature :

150°C (TJ)

Package / Case :

8-PowerVDFN

Packaging :

Digi-Reel®

Part Status :

Discontinued at Digi-Key

Power Dissipation (Max) :

1.6W (Ta), 42W (Tc)

Rds On (Max) @ Id, Vgs :

114 mOhm @ 3.6A, 10V

Series :

U-MOSVIII-H

Supplier Device Package :

8-SOP Advance (5x5)

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

4V @ 200µA