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- Manufacturer :
- Vishay Semiconductor Diodes Division
- Product Category :
- Diodes - Rectifiers - Single
- Capacitance @ Vr, F :
- 10pF @ 4V, 1MHz
- Current - Average Rectified (Io) :
- 1A
- Current - Reverse Leakage @ Vr :
- 10µA @ 600V
- Diode Type :
- Standard
- Mounting Type :
- Surface Mount
- Operating Temperature - Junction :
- -55°C ~ 150°C
- Package / Case :
- DO-214AC, SMA
- Packaging :
- Digi-Reel®
- Part Status :
- Active
- Reverse Recovery Time (trr) :
- 75ns
- Series :
- -
- Speed :
- Fast Recovery = 200mA (Io)
- Supplier Device Package :
- DO-214AC (SMA)
- Voltage - DC Reverse (Vr) (Max) :
- 600V
- Voltage - Forward (Vf) (Max) @ If :
- 1.7V @ 1A
- Datasheet :
- US1J-E3/61T
Cross References
-
Stock 2,493
-
Stock 3,580
-
Stock 909
-
Stock 2,265
-
Stock 1,525
PEOPLE WHO BOUGHT Diodes - Rectifiers - Single ALSO BOUGHT
-
Stock 1,123
-
Stock 3,567
-
Stock 3,083
-
Stock 1,803
-
Stock 924
PEOPLE VIEWING US1J-E3/61T THEN BOUGHT
-
Stock 1,137
-
Stock 1,290
-
Stock 736
-
Stock 3,263
-
Stock 2,040
Lastest News
05/13/2019
05/13/2019
05/09/2019
Search Part Number: "US1J" Included word is 15
Part Number | Manufacturer | Stock | Description |
---|---|---|---|
US1JHE3/61T | Vishay Semiconductor Diodes Division | 2,493 | DIODE GEN PURP 600V 1A DO214AC |
US1JHE3/61T | Vishay Semiconductor Diodes Division | 3,580 | DIODE GEN PURP 600V 1A DO214AC |
US1JHE3/61T | Vishay Semiconductor Diodes Division | 909 | DIODE GEN PURP 600V 1A DO214AC |
US1JHE3/5AT | Vishay Semiconductor Diodes Division | 2,265 | DIODE GEN PURP 600V 1A DO214AC |
US1J/1 | Vishay Semiconductor Diodes Division | 1,525 | DIODE GEN PURP 600V 1A DO214AC |
US1J-13 | Diodes Incorporated | 1,345 | DIODE GEN PURP 600V 1A SMA |
US1J-13 | Diodes Incorporated | 1,048 | DIODE GEN PURP 600V 1A SMA |
US1J-13 | Diodes Incorporated | 3,222 | DIODE GEN PURP 600V 1A SMA |
US1JHR3G | Taiwan Semiconductor Corporation | 2,706 | DIODE GEN PURP 600V 1A DO214AC |
US1J M2G | Taiwan Semiconductor Corporation | 3,486 | DIODE GEN PURP 600V 1A DO214AC |
US1JDF-13 | Diodes Incorporated | 1,442 | DIODE GEN PURPOSE 600V 1A DFLAT |
US1J-M3/61T | Vishay Semiconductor Diodes Division | 2,936 | DIODE GEN PURP 600V 1A DO214AC |
US1J-M3/5AT | Vishay Semiconductor Diodes Division | 3,676 | DIODE GEN PURP 600V 1A DO214AC |
US1JHE3_A/I | Vishay Semiconductor Diodes Division | 822 | DIODE GEN PURP 600V 1A DO214AC |
US1JHE3_A/I | Vishay Semiconductor Diodes Division | 3,905 | DIODE GEN PURP 600V 1A DO214AC |
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