SI2319DS-T1-GE3

Manufacturer :

Vishay Siliconix

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

2.3A (Ta)

Drain to Source Voltage (Vdss) :

40V

Drive Voltage (Max Rds On, Min Rds On) :

10V

FET Feature :

-

FET Type :

P-Channel

Gate Charge (Qg) (Max) @ Vgs :

17nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

470pF @ 20V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

TO-236-3, SC-59, SOT-23-3

Packaging :

Cut Tape (CT)

Part Status :

Active

Power Dissipation (Max) :

750mW (Ta)

Rds On (Max) @ Id, Vgs :

82 mOhm @ 3A, 10V

Series :

TrenchFET®

Supplier Device Package :

-

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

3V @ 250µA