SI2356DS-T1-GE3

Manufacturer :

Vishay Siliconix

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

4.3A (Tc)

Drain to Source Voltage (Vdss) :

40V

Drive Voltage (Max Rds On, Min Rds On) :

2.5V, 10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

13nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

370pF @ 20V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

TO-236-3, SC-59, SOT-23-3

Packaging :

Tape & Reel (TR)

Part Status :

Active

Power Dissipation (Max) :

960mW (Ta), 1.7W (Tc)

Rds On (Max) @ Id, Vgs :

51 mOhm @ 3.2A, 10V

Series :

TrenchFET®

Supplier Device Package :

TO-236

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±12V

Vgs(th) (Max) @ Id :

1.5V @ 250µA