SI3590DV-T1-E3

Manufacturer :

Vishay Siliconix

Product Category :

Transistors - FETs, MOSFETs - Arrays

Current - Continuous Drain (Id) @ 25°C :

2.5A, 1.7A

Drain to Source Voltage (Vdss) :

30V

FET Feature :

Logic Level Gate

FET Type :

N and P-Channel

Gate Charge (Qg) (Max) @ Vgs :

4.5nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds :

-

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Packaging :

Cut Tape (CT)

Part Status :

Active

Power - Max :

830mW

Rds On (Max) @ Id, Vgs :

77 mOhm @ 3A, 4.5V

Series :

TrenchFET®

Supplier Device Package :

6-TSOP

Vgs(th) (Max) @ Id :

1.5V @ 250µA