Power Dissipation (Max) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
3 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK MANUFACTURE DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
IXTH130N20T
Per Unit
$5.34
RFQ
1,739
Ships today + free overnight shipping
IXYS MOSFET N-CH 200V 130A TO-247 TrenchHV™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-247-3 TO-247 (IXTH) 830W (Tc) N-Channel - 200V 130A (Tc) 16 mOhm @ 500mA, 10V 5V @ 1mA 150nC @ 10V 8800pF @ 25V 10V ±20V
IXFK170N20P
Per Unit
$15.56
RFQ
1,420
Ships today + free overnight shipping
IXYS MOSFET N-CH 200V 170A TO-264 HiPerFET™, PolarP2™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-264-3, TO-264AA TO-264AA (IXFK) 1250W (Tc) N-Channel - 200V 170A (Tc) 14 mOhm @ 500mA, 10V 5V @ 1mA 185nC @ 10V 11400pF @ 25V 10V ±20V
IXFX170N20P
Per Unit
$15.41
RFQ
941
Ships today + free overnight shipping
IXYS MOSFET N-CH 200V 170A PLUS247 HiPerFET™, PolarP2™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-247-3 PLUS247™-3 1250W (Tc) N-Channel - 200V 170A (Tc) 14 mOhm @ 500mA, 10V 5V @ 1mA 185nC @ 10V 11400pF @ 25V 10V ±20V
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