- Manufacture :
- Part Status :
- Package / Case :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
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3 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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2,232
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ON Semiconductor | MOSFET N-CH 600V 1.5A IPAK | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | I-PAK | 46W (Tc) | N-Channel | - | 600V | 1.5A (Tc) | 8.5 Ohm @ 200mA, 10V | 3.7V @ 50µA | 7.2nC @ 10V | 160pF @ 25V | 10V | ±30V | ||
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3,497
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Alpha & Omega Semiconductor Inc. | MOSFET N-CH 250V 8A TO251A | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 Stub Leads, IPak | TO-251A | 78W (Tc) | N-Channel | - | 250V | 8A (Tc) | 560 mOhm @ 1.5A, 10V | 4.3V @ 250µA | 7.2nC @ 10V | 306pF @ 25V | 10V | ±30V | |||
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1,894
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ON Semiconductor | MOSFET N-CH 800V 1A IPAK | QFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | I-PAK | 2.5W (Ta), 45W (Tc) | N-Channel | - | 800V | 1A (Tc) | 20 Ohm @ 500mA, 10V | 5V @ 250µA | 7.2nC @ 10V | 195pF @ 25V | 10V | ±30V |
