Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Vgs(th) (Max) @ Id :
Input Capacitance (Ciss) (Max) @ Vds :
2 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK MANUFACTURE DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
NDD01N60-1G
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RFQ
2,232
Ships today + free overnight shipping
ON Semiconductor MOSFET N-CH 600V 1.5A IPAK - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-251-3 Short Leads, IPak, TO-251AA I-PAK 46W (Tc) N-Channel - 600V 1.5A (Tc) 8.5 Ohm @ 200mA, 10V 3.7V @ 50µA 7.2nC @ 10V 160pF @ 25V 10V ±30V
FQU1N80TU
Per Unit
$1.12
RFQ
1,894
Ships today + free overnight shipping
ON Semiconductor MOSFET N-CH 800V 1A IPAK QFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-251-3 Short Leads, IPak, TO-251AA I-PAK 2.5W (Ta), 45W (Tc) N-Channel - 800V 1A (Tc) 20 Ohm @ 500mA, 10V 5V @ 250µA 7.2nC @ 10V 195pF @ 25V 10V ±30V
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