Supplier Device Package :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
4 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK MANUFACTURE DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
FQP11N50CF
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RFQ
2,735
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ON Semiconductor MOSFET N-CH 500V 11A TO-220 FRFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220-3 195W (Tc) N-Channel - 500V 11A (Tc) 550 mOhm @ 5.5A, 10V 4V @ 250µA 55nC @ 10V 2055pF @ 25V 10V ±30V
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RFQ
1,309
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ON Semiconductor IC POWER MANAGEMENT QFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220AB 195W (Tc) N-Channel - 500V 13A (Tc) 480 mOhm @ 6.5A, 10V 4V @ 250µA 56nC @ 10V 2055pF @ 25V 10V ±30V
FQP13N50C
Per Unit
$2.12
RFQ
1,860
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ON Semiconductor MOSFET N-CH 500V 13A TO-220 QFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220AB 195W (Tc) N-Channel - 500V 13A (Tc) 480 mOhm @ 6.5A, 10V 4V @ 250µA 56nC @ 10V 2055pF @ 25V 10V ±30V
FQI13N50CTU
Per Unit
$2.24
RFQ
2,870
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ON Semiconductor MOSFET N-CH 500V 13A I2PAK QFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA I2PAK (TO-262) 195W (Tc) N-Channel - 500V 13A (Tc) 480 mOhm @ 6.5A, 10V 4V @ 250µA 56nC @ 10V 2055pF @ 25V 10V ±30V
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