9 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK MANUFACTURE DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
BSR316PL6327HTSA1
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RFQ
2,097
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Infineon Technologies MOSFET P-CH 100V 0.36A SC-59 SIPMOS® Discontinued at Digi-Key Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 PG-SC-59 500mW (Ta) P-Channel - 100V 360mA (Ta) 1.8 Ohm @ 360mA, 10V 1V @ 170µA 7nC @ 10V 165pF @ 25V 4.5V, 10V ±20V
TPH2010FNH,L1Q
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RFQ
1,872
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Toshiba Semiconductor and Storage MOSFET N-CH 250V 5.6A 8SOP U-MOSVIII-H Discontinued at Digi-Key Digi-Reel® MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-PowerVDFN 8-SOP Advance (5x5) 1.6W (Ta), 42W (Tc) N-Channel - 250V 5.6A (Ta) 198 mOhm @ 2.8A, 10V 4V @ 200µA 7nC @ 10V 600pF @ 100V 10V ±20V
TPH2010FNH,L1Q
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RFQ
2,600
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Toshiba Semiconductor and Storage MOSFET N-CH 250V 5.6A 8SOP U-MOSVIII-H Discontinued at Digi-Key Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-PowerVDFN 8-SOP Advance (5x5) 1.6W (Ta), 42W (Tc) N-Channel - 250V 5.6A (Ta) 198 mOhm @ 2.8A, 10V 4V @ 200µA 7nC @ 10V 600pF @ 100V 10V ±20V
SSM3K318T,LF
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RFQ
2,466
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Toshiba Semiconductor and Storage MOSFET N-CH 60V 2.5A TSM U-MOSIV Discontinued at Digi-Key Digi-Reel® MOSFET (Metal Oxide) 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 TSM 700mW (Ta) N-Channel - 60V 2.5A (Ta) 107 mOhm @ 2A, 10V - 7nC @ 10V 235pF @ 30V 4.5V, 10V ±20V
SSM3K318T,LF
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RFQ
3,347
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Toshiba Semiconductor and Storage MOSFET N-CH 60V 2.5A TSM U-MOSIV Discontinued at Digi-Key Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 TSM 700mW (Ta) N-Channel - 60V 2.5A (Ta) 107 mOhm @ 2A, 10V - 7nC @ 10V 235pF @ 30V 4.5V, 10V ±20V
TPH1110ENH,L1Q
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RFQ
2,156
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Toshiba Semiconductor and Storage MOSFET N-CH 200V 7.2A 8SOP U-MOSVIII-H Discontinued at Digi-Key Digi-Reel® MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-PowerVDFN 8-SOP Advance (5x5) 1.6W (Ta), 42W (Tc) N-Channel - 200V 7.2A (Ta) 114 mOhm @ 3.6A, 10V 4V @ 200µA 7nC @ 10V 600pF @ 100V 10V ±20V
TPH1110ENH,L1Q
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RFQ
1,519
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Toshiba Semiconductor and Storage MOSFET N-CH 200V 7.2A 8SOP U-MOSVIII-H Discontinued at Digi-Key Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-PowerVDFN 8-SOP Advance (5x5) 1.6W (Ta), 42W (Tc) N-Channel - 200V 7.2A (Ta) 114 mOhm @ 3.6A, 10V 4V @ 200µA 7nC @ 10V 600pF @ 100V 10V ±20V
TPN1110ENH,L1Q
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RFQ
688
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Toshiba Semiconductor and Storage MOSFET N-CH 200V 7.2A 8TSON U-MOSVIII-H Discontinued at Digi-Key Digi-Reel® MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-PowerVDFN 8-TSON Advance (3.3x3.3) 700mW (Ta), 39W (Tc) N-Channel - 200V 7.2A (Ta) 114 mOhm @ 3.6A, 10V 4V @ 200µA 7nC @ 10V 600pF @ 100V 10V ±20V
TPN1110ENH,L1Q
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RFQ
867
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Toshiba Semiconductor and Storage MOSFET N-CH 200V 7.2A 8TSON U-MOSVIII-H Discontinued at Digi-Key Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-PowerVDFN 8-TSON Advance (3.3x3.3) 700mW (Ta), 39W (Tc) N-Channel - 200V 7.2A (Ta) 114 mOhm @ 3.6A, 10V 4V @ 200µA 7nC @ 10V 600pF @ 100V 10V ±20V
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