- Supplier Device Package :
- Power Dissipation (Max) :
- FET Type :
- Rds On (Max) @ Id, Vgs :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
4 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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3,240
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Vishay Siliconix | MOSFET N-CH 800V 1.8A D2PAK | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | - | N-Channel | 800V | 1.8A (Tc) | 6.5 Ohm @ 1.1A, 10V | 4V @ 250µA | 38nC @ 10V | 530pF @ 25V | 10V | ±20V | ||
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1,439
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Vishay Siliconix | MOSFET P-CH 400V 1.8A DPAK | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 50W (Tc) | P-Channel | 400V | 1.8A (Tc) | 7 Ohm @ 1.1A, 10V | 4V @ 250µA | 13nC @ 10V | 270pF @ 25V | 10V | ±20V | ||
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GET PRICE |
905
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|
Vishay Siliconix | MOSFET P-CH 60V 1.8A SOT223 | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | SOT-223 | 2W (Ta), 3.1W (Tc) | P-Channel | 60V | 1.8A (Tc) | 500 mOhm @ 1.1A, 10V | 4V @ 250µA | 12nC @ 10V | 270pF @ 25V | 10V | ±20V | ||
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3,826
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Vishay Siliconix | MOSFET P-CH 200V 1.8A D2PAK | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 3W (Ta), 20W (Tc) | P-Channel | 200V | 1.8A (Tc) | 3 Ohm @ 900mA, 10V | 4V @ 250µA | 11nC @ 10V | 170pF @ 25V | 10V | ±20V |
