Drain to Source Voltage (Vdss) :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
2 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK MANUFACTURE DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
IRFBE20S
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RFQ
3,240
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Vishay Siliconix MOSFET N-CH 800V 1.8A D2PAK - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK - N-Channel 800V 1.8A (Tc) 6.5 Ohm @ 1.1A, 10V 4V @ 250µA 38nC @ 10V 530pF @ 25V 10V ±20V
IRF9610S
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RFQ
3,826
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Vishay Siliconix MOSFET P-CH 200V 1.8A D2PAK - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 3W (Ta), 20W (Tc) P-Channel 200V 1.8A (Tc) 3 Ohm @ 900mA, 10V 4V @ 250µA 11nC @ 10V 170pF @ 25V 10V ±20V
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