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- Current - Continuous Drain (Id) @ 25°C :
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7 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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3,962
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Nexperia USA Inc. | MOSFET P-CH 20V 2A 6TSSOP | - | Discontinued at Digi-Key | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 6-TSSOP, SC-88, SOT-363 | 6-TSSOP | 375mW (Ta), 2.4W (Tc) | P-Channel | - | 20V | 2A (Tj) | 115 mOhm @ 2A, 4.5V | 1.15V @ 250µA | 7.2nC @ 4.5V | 560pF @ 10V | 2.5V, 4.5V | ±12V | ||
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1,920
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Texas Instruments | MOSFET P-CH 20V 104A 8VSON | NexFET™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-VSON (3.3x3.3) | 2.8W (Ta), 96W (Tc) | P-Channel | - | 20V | 104A (Tc) | 6.5 mOhm @ 10A, 4.5V | 1.15V @ 250µA | 14.1nC @ 4.5V | 2120pF @ 10V | 1.8V, 4.5V | ±12V | |||
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1,392
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Nexperia USA Inc. | MOSFET P-CH 20V 1A SOT323 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | SC-70, SOT-323 | SOT-323-3 | 290mW (Ta), 1.67W (Tc) | P-Channel | - | 20V | 1A (Ta) | 200 mOhm @ 1A, 4.5V | 1.15V @ 250µA | 3.9nC @ 4.5V | 280pF @ 10V | 4.5V | ±12V | |||
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1,209
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Texas Instruments | MOSFET P-CH 20V 3A 6DSBGA | NexFET™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 6-UFBGA, DSBGA | 6-DSBGA | 750mW (Ta) | P-Channel | - | 20V | 3A (Ta) | 32.5 mOhm @ 1.5A, 4.5V | 1.15V @ 250µA | 4.4nC @ 4.5V | 595pF @ 10V | 1.8V, 4.5V | ±8V | |||
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1,099
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Texas Instruments | MOSFET P-CH 20V 104A 8VSON | NexFET™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-VSON (3.3x3.3) | 2.8W (Ta), 96W (Tc) | P-Channel | - | 20V | 104A (Tc) | 6.5 mOhm @ 10A, 4.5V | 1.15V @ 250µA | 14.1nC @ 4.5V | 2120pF @ 10V | 1.8V, 4.5V | ±12V | |||
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1,226
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Texas Instruments | MOSFET P-CH 20V 3A 6DSBGA | NexFET™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 6-UFBGA, DSBGA | 6-DSBGA | 750mW (Ta) | P-Channel | - | 20V | 3A (Ta) | 32.5 mOhm @ 1.5A, 4.5V | 1.15V @ 250µA | 4.4nC @ 4.5V | 595pF @ 10V | 1.8V, 4.5V | ±8V | |||
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817
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Texas Instruments | MOSFET P-CH 20V 76A 8SON | NexFET™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-VSON (3.3x3.3) | 2.8W (Ta), 69W (Tc) | P-Channel | - | 20V | 76A (Tc) | 8.9 mOhm @ 10A, 4.5V | 1.15V @ 250µA | 9.7nC @ 4.5V | 1790pF @ 10V | 1.8V, 4.5V | ±12V |
