- Mounting Type :
- Package / Case :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
6 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Input Capacitance (Ciss) (Max) @ Vds | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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GET PRICE |
2,871
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|
GeneSiC Semiconductor | TRANS SJT 650V 16A TO276 | - | Obsolete | Bulk | SiC (Silicon Carbide Junction Transistor) | -55°C ~ 225°C (TJ) | Surface Mount | TO-276AA | TO-276 | 330W (Tc) | 650V | 16A (Tc) (155°C) | 105 mOhm @ 16A | 1534pF @ 35V | ||
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3,289
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|
GeneSiC Semiconductor | TRANS SJT 650V 15A TO-257 | - | Obsolete | Bulk | SiC (Silicon Carbide Junction Transistor) | -55°C ~ 225°C (TJ) | Through Hole | TO-257-3 | TO-257 | 172W (Tc) | 650V | 15A (Tc) (155°C) | 105 mOhm @ 15A | 1534pF @ 35V | ||
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2,415
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|
GeneSiC Semiconductor | TRANS SJT 650V 8A TO276 | - | Obsolete | Bulk | SiC (Silicon Carbide Junction Transistor) | -55°C ~ 225°C (TJ) | Surface Mount | TO-276AA | TO-276 | 200W (Tc) | 650V | 8A (Tc) (158°C) | 170 mOhm @ 8A | 720pF @ 35V | ||
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GET PRICE |
1,976
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|
GeneSiC Semiconductor | TRANS SJT 650V 7A TO-257 | - | Obsolete | Tube | SiC (Silicon Carbide Junction Transistor) | -55°C ~ 225°C (TJ) | Through Hole | TO-257-3 | TO-257 | 80W (Tc) | 650V | 7A (Tc) (165°C) | 170 mOhm @ 7A | 720pF @ 35V | ||
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3,854
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|
GeneSiC Semiconductor | TRANS SJT 650V 4A TO276 | - | Obsolete | Tube | SiC (Silicon Carbide Junction Transistor) | -55°C ~ 225°C (TJ) | Surface Mount | TO-276AA | TO-276 | 125W (Tc) | 650V | 4A (Tc) (165°C) | 415 mOhm @ 4A | 324pF @ 35V | ||
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GET PRICE |
621
Ships today + free overnight shipping
|
GeneSiC Semiconductor | TRANS SJT 650V 4A TO-257 | - | Obsolete | Bulk | SiC (Silicon Carbide Junction Transistor) | -55°C ~ 225°C (TJ) | Through Hole | TO-257-3 | TO-257 | 47W (Tc) | 650V | 4A (Tc) (165°C) | 415 mOhm @ 4A | 324pF @ 35V |
