- Operating Temperature :
- Mounting Type :
- Package / Case :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Input Capacitance (Ciss) (Max) @ Vds :
13 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Input Capacitance (Ciss) (Max) @ Vds | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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2,871
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|
GeneSiC Semiconductor | TRANS SJT 650V 16A TO276 | - | Obsolete | Bulk | SiC (Silicon Carbide Junction Transistor) | -55°C ~ 225°C (TJ) | Surface Mount | TO-276AA | TO-276 | 330W (Tc) | 650V | 16A (Tc) (155°C) | 105 mOhm @ 16A | 1534pF @ 35V | ||
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3,289
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|
GeneSiC Semiconductor | TRANS SJT 650V 15A TO-257 | - | Obsolete | Bulk | SiC (Silicon Carbide Junction Transistor) | -55°C ~ 225°C (TJ) | Through Hole | TO-257-3 | TO-257 | 172W (Tc) | 650V | 15A (Tc) (155°C) | 105 mOhm @ 15A | 1534pF @ 35V | ||
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2,415
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|
GeneSiC Semiconductor | TRANS SJT 650V 8A TO276 | - | Obsolete | Bulk | SiC (Silicon Carbide Junction Transistor) | -55°C ~ 225°C (TJ) | Surface Mount | TO-276AA | TO-276 | 200W (Tc) | 650V | 8A (Tc) (158°C) | 170 mOhm @ 8A | 720pF @ 35V | ||
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1,976
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|
GeneSiC Semiconductor | TRANS SJT 650V 7A TO-257 | - | Obsolete | Tube | SiC (Silicon Carbide Junction Transistor) | -55°C ~ 225°C (TJ) | Through Hole | TO-257-3 | TO-257 | 80W (Tc) | 650V | 7A (Tc) (165°C) | 170 mOhm @ 7A | 720pF @ 35V | ||
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3,854
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|
GeneSiC Semiconductor | TRANS SJT 650V 4A TO276 | - | Obsolete | Tube | SiC (Silicon Carbide Junction Transistor) | -55°C ~ 225°C (TJ) | Surface Mount | TO-276AA | TO-276 | 125W (Tc) | 650V | 4A (Tc) (165°C) | 415 mOhm @ 4A | 324pF @ 35V | ||
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621
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|
GeneSiC Semiconductor | TRANS SJT 650V 4A TO-257 | - | Obsolete | Bulk | SiC (Silicon Carbide Junction Transistor) | -55°C ~ 225°C (TJ) | Through Hole | TO-257-3 | TO-257 | 47W (Tc) | 650V | 4A (Tc) (165°C) | 415 mOhm @ 4A | 324pF @ 35V | ||
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2,916
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|
GeneSiC Semiconductor | TRANS SJT 1700V 16A TO-247AB | - | Obsolete | Tube | SiC (Silicon Carbide Junction Transistor) | 175°C (TJ) | Through Hole | TO-247-3 | TO-247AB | 282W (Tc) | 1700V | 16A (Tc) (90°C) | 110 mOhm @ 16A | - | ||
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2,440
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|
GeneSiC Semiconductor | TRANS SJT 1.7KV 100A | - | Obsolete | Tube | SiC (Silicon Carbide Junction Transistor) | 175°C (TJ) | Through Hole | TO-247-3 | TO-247 | 583W (Tc) | 1700V | 100A (Tc) | 25 mOhm @ 50A | - | ||
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2,973
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|
GeneSiC Semiconductor | TRANS SJT 1.2KV 20A | - | Obsolete | Tube | SiC (Silicon Carbide Junction Transistor) | 175°C (TJ) | Through Hole | TO-247-3 | TO-247AB | 282W (Tc) | 1200V | 20A (Tc) | 70 mOhm @ 20A | - | ||
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2,727
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|
GeneSiC Semiconductor | TRANS SJT 1.2KV 10A | - | Obsolete | Tube | SiC (Silicon Carbide Junction Transistor) | 175°C (TJ) | Through Hole | TO-247-3 | TO-247AB | 170W (Tc) | 1200V | 10A (Tc) | 140 mOhm @ 10A | - | ||
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3,666
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|
GeneSiC Semiconductor | TRANS SJT 1200V 5A | - | Obsolete | Tube | SiC (Silicon Carbide Junction Transistor) | 175°C (TJ) | Through Hole | TO-247-3 | TO-247AB | 106W (Tc) | 1200V | 5A (Tc) | 280 mOhm @ 5A | - | ||
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1,525
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|
GeneSiC Semiconductor | TRANS SJT 1200V 6A TO-247AB | - | Obsolete | Tube | SiC (Silicon Carbide Junction Transistor) | 175°C (TJ) | Through Hole | TO-247-3 | TO-247AB | - | 1200V | 6A (Tc) (90°C) | 220 mOhm @ 6A | - | ||
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GET PRICE |
1,365
Ships today + free overnight shipping
|
GeneSiC Semiconductor | TRANS SJT 1200V 3A TO-247AB | - | Obsolete | Tube | SiC (Silicon Carbide Junction Transistor) | 175°C (TJ) | Through Hole | TO-247-3 | TO-247AB | 15W (Tc) | 1200V | 3A (Tc) (95°C) | 460 mOhm @ 3A | - |
