- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
5 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | |
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2,973
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GeneSiC Semiconductor | TRANS SJT 1.2KV 20A | - | Obsolete | Tube | SiC (Silicon Carbide Junction Transistor) | 175°C (TJ) | Through Hole | TO-247-3 | TO-247AB | 282W (Tc) | 1200V | 20A (Tc) | 70 mOhm @ 20A | ||
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2,727
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GeneSiC Semiconductor | TRANS SJT 1.2KV 10A | - | Obsolete | Tube | SiC (Silicon Carbide Junction Transistor) | 175°C (TJ) | Through Hole | TO-247-3 | TO-247AB | 170W (Tc) | 1200V | 10A (Tc) | 140 mOhm @ 10A | ||
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3,666
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GeneSiC Semiconductor | TRANS SJT 1200V 5A | - | Obsolete | Tube | SiC (Silicon Carbide Junction Transistor) | 175°C (TJ) | Through Hole | TO-247-3 | TO-247AB | 106W (Tc) | 1200V | 5A (Tc) | 280 mOhm @ 5A | ||
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1,525
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GeneSiC Semiconductor | TRANS SJT 1200V 6A TO-247AB | - | Obsolete | Tube | SiC (Silicon Carbide Junction Transistor) | 175°C (TJ) | Through Hole | TO-247-3 | TO-247AB | - | 1200V | 6A (Tc) (90°C) | 220 mOhm @ 6A | ||
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1,365
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GeneSiC Semiconductor | TRANS SJT 1200V 3A TO-247AB | - | Obsolete | Tube | SiC (Silicon Carbide Junction Transistor) | 175°C (TJ) | Through Hole | TO-247-3 | TO-247AB | 15W (Tc) | 1200V | 3A (Tc) (95°C) | 460 mOhm @ 3A |
