- Packaging :
- Operating Temperature :
- Supplier Device Package :
- Power Dissipation (Max) :
- FET Type :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
8 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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3,947
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Infineon Technologies | MOSFET N-CH 200V 21A TO-263 | SIPMOS® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK (TO-263AB) | 125W (Tc) | N-Channel | - | 200V | 21A (Tc) | 130 mOhm @ 13.5A, 10V | 4V @ 1mA | - | 1900pF @ 25V | 10V | ±20V | |||
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1,522
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Infineon Technologies | MOSFET P-CH 60V 80A TO-263 | SIPMOS® | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | PG-TO263-3-2 | 340W (Tc) | P-Channel | - | 60V | 80A (Tc) | 23 mOhm @ 64A, 10V | 4V @ 5.5mA | 173nC @ 10V | 5033pF @ 25V | 10V | ±20V | ||
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1,886
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Infineon Technologies | MOSFET P-CH 60V 80A TO-263 | SIPMOS® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | PG-TO263-3-2 | 340W (Tc) | P-Channel | - | 60V | 80A (Tc) | 23 mOhm @ 64A, 10V | 4V @ 5.5mA | 173nC @ 10V | 5033pF @ 25V | 10V | ±20V | |||
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2,836
Ships today + free overnight shipping
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Infineon Technologies | MOSFET P-CH 60V 80A TO-263 | SIPMOS® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | PG-TO263-3-2 | 340W (Tc) | P-Channel | - | 60V | 80A (Tc) | 23 mOhm @ 64A, 10V | 4V @ 5.5mA | 173nC @ 10V | 5033pF @ 25V | 10V | ±20V | |||
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3,382
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Infineon Technologies | MOSFET P-CH 60V 8.8A TO-263 | SIPMOS® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK (TO-263AB) | 42W (Tc) | P-Channel | - | 60V | 8.8A (Ta) | 300 mOhm @ 6.2A, 10V | 4V @ 250µA | 13nC @ 10V | 420pF @ 25V | 10V | ±20V | |||
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2,871
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Infineon Technologies | MOSFET P-CH 60V 18.7A TO-263 | SIPMOS® | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK (TO-263AB) | 81.1W (Ta) | P-Channel | - | 60V | 18.7A (Ta) | 130 mOhm @ 13.2A, 10V | 4V @ 1mA | 28nC @ 10V | 860pF @ 25V | 10V | ±20V | ||
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3,598
Ships today + free overnight shipping
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Infineon Technologies | MOSFET P-CH 60V 18.7A TO-263 | SIPMOS® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK (TO-263AB) | 81.1W (Ta) | P-Channel | - | 60V | 18.7A (Ta) | 130 mOhm @ 13.2A, 10V | 4V @ 1mA | 28nC @ 10V | 860pF @ 25V | 10V | ±20V | |||
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3,276
Ships today + free overnight shipping
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Infineon Technologies | MOSFET P-CH 60V 18.7A TO-263 | SIPMOS® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK (TO-263AB) | 81.1W (Ta) | P-Channel | - | 60V | 18.7A (Ta) | 130 mOhm @ 13.2A, 10V | 4V @ 1mA | 28nC @ 10V | 860pF @ 25V | 10V | ±20V |
