Supplier Device Package :
Power Dissipation (Max) :
Current - Continuous Drain (Id) @ 25°C :
Vgs(th) (Max) @ Id :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
2 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK MANUFACTURE DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
SPB80P06PGATMA1
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RFQ
1,522
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Infineon Technologies MOSFET P-CH 60V 80A TO-263 SIPMOS® Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB PG-TO263-3-2 340W (Tc) P-Channel - 60V 80A (Tc) 23 mOhm @ 64A, 10V 4V @ 5.5mA 173nC @ 10V 5033pF @ 25V 10V ±20V
SPB18P06PGATMA1
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RFQ
2,871
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Infineon Technologies MOSFET P-CH 60V 18.7A TO-263 SIPMOS® Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D²PAK (TO-263AB) 81.1W (Ta) P-Channel - 60V 18.7A (Ta) 130 mOhm @ 13.2A, 10V 4V @ 1mA 28nC @ 10V 860pF @ 25V 10V ±20V
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