Drive Voltage (Max Rds On, Min Rds On) :
27 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK MANUFACTURE DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GA16JT17-247
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RFQ
2,916
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GeneSiC Semiconductor TRANS SJT 1700V 16A TO-247AB - Obsolete Tube SiC (Silicon Carbide Junction Transistor) 175°C (TJ) Through Hole TO-247-3 TO-247AB 282W (Tc) - - 1700V 16A (Tc) (90°C) 110 mOhm @ 16A - - - - -
GA50JT17-247
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RFQ
2,440
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GeneSiC Semiconductor TRANS SJT 1.7KV 100A - Obsolete Tube SiC (Silicon Carbide Junction Transistor) 175°C (TJ) Through Hole TO-247-3 TO-247 583W (Tc) - - 1700V 100A (Tc) 25 mOhm @ 50A - - - - -
C2M1000170J-TR
Per Unit
$5.27
RFQ
2,655
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Cree/Wolfspeed MOSFET N-CH 1700V 5.3A TO247 C2M™ Active Tape & Reel (TR) SiCFET (Silicon Carbide) -55°C ~ 150°C (TJ) Surface Mount TO-263-8, D²Pak (7 Leads + Tab), TO-263CA D2PAK-7 78W (Tc) N-Channel - 1700V 5.3A (Tc) 1.4 Ohm @ 2A, 20V 3.1V @ 500µA (Typ) 13nC @ 20V 200pF @ 1000V 20V +25V, -10V
Default Photo
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RFQ
3,247
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Microsemi Corporation MOSFET N-CH 700V D3PAK - Obsolete Bulk SiCFET (Silicon Carbide) -55°C ~ 175°C (TJ) Surface Mount TO-268-3, D³Pak (2 Leads + Tab), TO-268AA D3Pak 52W (Tc) N-Channel - 1700V 4.6A (Tc) 1.2 Ohm @ 2A, 20V 3.2V @ 500µA 29nC @ 20V 325pF @ 1000V 20V +25V, -10V
Default Photo
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RFQ
3,389
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Microsemi Corporation MOSFET N-CH 700V TO247 - Obsolete Tube SiCFET (Silicon Carbide) -55°C ~ 175°C (TJ) Through Hole TO-247-3 TO-247 65W (Tc) N-Channel - 1700V 5A (Tc) 1.25 Ohm @ 2.5A, 20V 3.2V @ 500µA 21nC @ 20V 249pF @ 1000V 20V +25V, -10V
IXTH1N170DHV
Per Unit
$9.72
RFQ
3,420
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IXYS MOSFET N-CH - Active - MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 Variant TO-247HV 290W (Tc) N-Channel Depletion Mode 1700V 1A (Tj) 16 Ohm @ 500mA, 0V 4.5V @ 250µA 47nC @ 5V 3090pF @ 25V 0V ±20V
C2M0045170D
Per Unit
$82.40
RFQ
1,223
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Cree/Wolfspeed MOSFET NCH 1.7KV 72A TO247 C2M™ Active Tube SiCFET (Silicon Carbide) -40°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247-3 520W (Tc) N-Channel - 1700V 72A (Tc) 70 mOhm @ 50A, 20V 4V @ 18mA 188nC @ 20V 3672pF @ 1kV 20V +25V, -10V
IXTT2N170D2
Per Unit
$19.74
RFQ
3,980
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IXYS MOSFET N-CH 1700V 2A TO-268 - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-268-3, D³Pak (2 Leads + Tab), TO-268AA TO-268 568W (Tc) N-Channel Depletion Mode 1700V 2A (Tj) 6.5 Ohm @ 1A, 0V - 110nC @ 5V 3650pF @ 25V - ±20V
Default Photo
Per Unit
$75.60
RFQ
2,545
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Cree/Wolfspeed ZFET SIC DMOSFET, 1700V VDS, RDS C2M™ Active - SiCFET (Silicon Carbide) -40°C ~ 150°C (TJ) Through Hole TO-247-4 TO-247-4L 520W (Tc) N-Channel - 1700V 72A (Tc) 59 mOhm @ 50A, 20V 4V @ 18mA 188nC @ 20V 3672pF @ 1000V 20V +25V, -10V
Default Photo
Per Unit
$32.76
RFQ
3,762
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Cree/Wolfspeed ZFET SIC DMOSFET, 1700V VDS, RDS C2M™ Active - SiCFET (Silicon Carbide) -55°C ~ 150°C (TJ) Through Hole TO-247-4 TO-247-4L 277W (Tc) N-Channel - 1700V 40A (Tc) 125 mOhm @ 28A, 20V 4V @ 10mA 120nC @ 20V 2250pF @ 1000V 20V +25V, -10V
SCT2H12NZGC11
Per Unit
$6.47
RFQ
2,000
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Rohm Semiconductor MOSFET N-CH 1700V 3.7A - Active Tube SiCFET (Silicon Carbide) 175°C (TJ) Through Hole TO-3PFM, SC-93-3 TO-3PFM 35W (Tc) N-Channel - 1700V 3.7A (Tc) 1.5 Ohm @ 1.1A, 18V 4V @ 900µA 14nC @ 18V 184pF @ 800V 18V +22V, -6V
C2M1000170D
Per Unit
$4.96
RFQ
2,972
Ships today + free overnight shipping
Cree/Wolfspeed MOSFET N-CH 1700V 4.9A TO247 Z-FET™ Active Tube SiCFET (Silicon Carbide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247-3 69W (Tc) N-Channel - 1700V 4.9A (Tc) 1.1 Ohm @ 2A, 20V 2.4V @ 100µA 13nC @ 20V 191pF @ 1000V 20V +25V, -10V
STW3N170
Per Unit
$4.59
RFQ
3,444
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STMicroelectronics MOSFET N-CH 1700V 2.6A TO247-3 PowerMESH™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247-3 160mW N-Channel - 1700V 2.6A (Tc) 13 Ohm @ 1.3A, 10V 5V @ 250µA 44nC @ 10V 1100pF @ 100V 10V ±30V
GA100JT17-227
Per Unit
$280.92
RFQ
1,742
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GeneSiC Semiconductor TRANS SJT 1700V 160A SOT227 - Not For New Designs Tube SiC (Silicon Carbide Junction Transistor) -55°C ~ 175°C (TJ) Chassis Mount SOT-227-4, miniBLOC SOT-227 535W (Tc) - - 1700V 160A (Tc) 10 mOhm @ 100A - - 14400pF @ 800V - -
SCT2750NYTB
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RFQ
2,692
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Rohm Semiconductor 1700V .75 OHM 6A SIC FET - Active Digi-Reel® MOSFET (Metal Oxide) 175°C (TJ) Surface Mount TO-268-3, D³Pak (2 Leads + Tab), TO-268AA TO-268 57W (Tc) N-Channel - 1700V 5.9A (Tc) 975 mOhm @ 1.7A, 18V 4V @ 630µA 17nC @ 18V 275pF @ 800V 18V +22V, -6V
SCT2750NYTB
Per Unit
$6.95
RFQ
3,457
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Rohm Semiconductor 1700V .75 OHM 6A SIC FET - Active Cut Tape (CT) MOSFET (Metal Oxide) 175°C (TJ) Surface Mount TO-268-3, D³Pak (2 Leads + Tab), TO-268AA TO-268 57W (Tc) N-Channel - 1700V 5.9A (Tc) 975 mOhm @ 1.7A, 18V 4V @ 630µA 17nC @ 18V 275pF @ 800V 18V +22V, -6V
SCT2750NYTB
Per Unit
$4.46
RFQ
3,368
Ships today + free overnight shipping
Rohm Semiconductor 1700V .75 OHM 6A SIC FET - Active Tape & Reel (TR) MOSFET (Metal Oxide) 175°C (TJ) Surface Mount TO-268-3, D³Pak (2 Leads + Tab), TO-268AA TO-268 57W (Tc) N-Channel - 1700V 5.9A (Tc) 975 mOhm @ 1.7A, 18V 4V @ 630µA 17nC @ 18V 275pF @ 800V 18V +22V, -6V
IXTH2N170D2
Per Unit
$11.98
RFQ
3,608
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IXYS MOSFET N-CH 1700V 2A TO-247 - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247 (IXTH) 568W (Tc) N-Channel Depletion Mode 1700V 2A (Tj) 6.5 Ohm @ 1A, 0V - 110nC @ 5V 3650pF @ 10V 0V ±20V
IXTA1N170DHV
Per Unit
$11.85
RFQ
3,193
Ships today + free overnight shipping
IXYS MOSFET N-CH 1700V 1A TO-263 - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263 290W (Tc) N-Channel Depletion Mode 1700V 1A (Tc) 16 Ohm @ 500mA, 0V - 47nC @ 5V 3090pF @ 25V 10V ±20V
SCT2H12NYTB
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RFQ
3,360
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Rohm Semiconductor 1700V 1.2 OHM 4A SIC FET - Active Digi-Reel® MOSFET (Metal Oxide) 175°C (TJ) Surface Mount TO-268-3, D³Pak (2 Leads + Tab), TO-268AA TO-268 44W (Tc) N-Channel - 1700V 4A (Tc) 1.5 Ohm @ 1.1A, 18V 4V @ 410µA 14nC @ 18V 184pF @ 800V 18V +22V, -6V
SCT2H12NYTB
Per Unit
$5.94
RFQ
3,455
Ships today + free overnight shipping
Rohm Semiconductor 1700V 1.2 OHM 4A SIC FET - Active Cut Tape (CT) MOSFET (Metal Oxide) 175°C (TJ) Surface Mount TO-268-3, D³Pak (2 Leads + Tab), TO-268AA TO-268 44W (Tc) N-Channel - 1700V 4A (Tc) 1.5 Ohm @ 1.1A, 18V 4V @ 410µA 14nC @ 18V 184pF @ 800V 18V +22V, -6V
SCT2H12NYTB
Per Unit
$3.81
RFQ
1,787
Ships today + free overnight shipping
Rohm Semiconductor 1700V 1.2 OHM 4A SIC FET - Active Tape & Reel (TR) MOSFET (Metal Oxide) 175°C (TJ) Surface Mount TO-268-3, D³Pak (2 Leads + Tab), TO-268AA TO-268 44W (Tc) N-Channel - 1700V 4A (Tc) 1.5 Ohm @ 1.1A, 18V 4V @ 410µA 14nC @ 18V 184pF @ 800V 18V +22V, -6V
GA04JT17-247
Per Unit
$30.45
RFQ
3,501
Ships today + free overnight shipping
GeneSiC Semiconductor TRANS SJT 1700V 4A TO-247AB - Active Tube SiC (Silicon Carbide Junction Transistor) 175°C (TJ) Through Hole TO-247-3 TO-247AB 106W (Tc) - - 1700V 4A (Tc) (95°C) 480 mOhm @ 4A - - - - -
GA08JT17-247
Per Unit
$51.77
RFQ
3,295
Ships today + free overnight shipping
GeneSiC Semiconductor TRANS SJT 1700V 8A TO-247AB - Active Tube SiC (Silicon Carbide Junction Transistor) 175°C (TJ) Through Hole TO-247-3 TO-247AB 48W (Tc) - - 1700V 8A (Tc) (90°C) 250 mOhm @ 8A - - - - -
WPH4003-1E
Per Unit
$5.65
RFQ
1,735
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ON Semiconductor MOSFET N-CH 1700V 2.5A - Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-3P-3 Full Pack TO-3PF 3W (Ta), 55W (Tc) N-Channel - 1700V 2.5A (Tc) 10.5 Ohm @ 1.5A, 10V - 48nC @ 10V 850pF @ 30V 10V ±30V
STFW3N170
Per Unit
$4.70
RFQ
3,192
Ships today + free overnight shipping
STMicroelectronics MOSFET N-CH 1700V 2.6A PowerMESH™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-3P-3 Full Pack TO-3PF 63W (Tc) N-Channel - 1700V 2.6A (Tc) 13 Ohm @ 1.3A, 10V 5V @ 250µA 44nC @ 10V 1100pF @ 100V 10V ±30V
C2M1000170J
Per Unit
$5.28
RFQ
2,922
Ships today + free overnight shipping
Cree/Wolfspeed MOSFET N-CH 1700V 5.3A TO247 C2M™ Active Bulk SiCFET (Silicon Carbide) -55°C ~ 150°C (TJ) Surface Mount TO-263-7 (Straight Leads) D2PAK (7-Lead) 78W (Tc) N-Channel - 1700V 5.3A (Tc) 1.4 Ohm @ 2A, 20V 3.1V @ 500µA (Typ) 13nC @ 20V 200pF @ 1000V 20V +25V, -10V
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