Power Dissipation (Max) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
2 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK MANUFACTURE DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
WPH4003-1E
Per Unit
$5.65
RFQ
1,735
Ships today + free overnight shipping
ON Semiconductor MOSFET N-CH 1700V 2.5A - Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-3P-3 Full Pack TO-3PF 3W (Ta), 55W (Tc) N-Channel - 1700V 2.5A (Tc) 10.5 Ohm @ 1.5A, 10V - 48nC @ 10V 850pF @ 30V 10V ±30V
STFW3N170
Per Unit
$4.70
RFQ
3,192
Ships today + free overnight shipping
STMicroelectronics MOSFET N-CH 1700V 2.6A PowerMESH™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-3P-3 Full Pack TO-3PF 63W (Tc) N-Channel - 1700V 2.6A (Tc) 13 Ohm @ 1.3A, 10V 5V @ 250µA 44nC @ 10V 1100pF @ 100V 10V ±30V
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