- Mounting Type :
- Supplier Device Package :
- Power Dissipation (Max) :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
6 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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1,320
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Microsemi Corporation | MOSFET N-CH 500V 24A D3PAK | POWER MOS 8™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA | D3Pak | 335W (Tc) | N-Channel | - | 500V | 24A (Tc) | 240 mOhm @ 11A, 10V | 5V @ 1mA | 90nC @ 10V | 3630pF @ 25V | 10V | ±30V | ||
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2,116
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Microsemi Corporation | MOSFET N-CH 600V 23A D3PAK | POWER MOS 8™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA | D3Pak | 415W (Tc) | N-Channel | - | 600V | 24A (Tc) | 290 mOhm @ 11A, 10V | 5V @ 1mA | 110nC @ 10V | 4415pF @ 25V | 10V | ±30V | ||
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3,517
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Microsemi Corporation | MOSFET N-CH 600V 23A TO-247 | POWER MOS 8™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247 [B] | 415W (Tc) | N-Channel | - | 600V | 24A (Tc) | 290 mOhm @ 11A, 10V | 5V @ 1mA | 110nC @ 10V | 4415pF @ 25V | 10V | ±30V | ||
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879
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Microsemi Corporation | MOSFET N-CH 500V 24A TO-247 | POWER MOS 8™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247 [B] | 335W (Tc) | N-Channel | - | 500V | 24A (Tc) | 240 mOhm @ 11A, 10V | 5V @ 1mA | 90nC @ 10V | 3630pF @ 25V | 10V | ±30V | |||
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1,301
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Microsemi Corporation | MOSFET N-CH 1200V 24A T-MAX | POWER MOS 8™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 Variant | T-MAX™ [B2] | 1040W (Tc) | N-Channel | - | 1200V | 24A (Tc) | 630 mOhm @ 12A, 10V | 5V @ 2.5mA | 260nC @ 10V | 8370pF @ 25V | 10V | ±30V | |||
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1,640
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Microsemi Corporation | MOSFET N-CH 1200V 24A TO-264 | POWER MOS 8™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-264-3, TO-264AA | TO-264 [L] | 1040W (Tc) | N-Channel | - | 1200V | 24A (Tc) | 680 mOhm @ 12A, 10V | 5V @ 2.5mA | 260nC @ 10V | 8370pF @ 25V | 10V | ±30V |
