Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
2 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK MANUFACTURE DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
APT24F50S
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1,320
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Microsemi Corporation MOSFET N-CH 500V 24A D3PAK POWER MOS 8™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-268-3, D³Pak (2 Leads + Tab), TO-268AA D3Pak 335W (Tc) N-Channel - 500V 24A (Tc) 240 mOhm @ 11A, 10V 5V @ 1mA 90nC @ 10V 3630pF @ 25V 10V ±30V
APT23F60S
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RFQ
2,116
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Microsemi Corporation MOSFET N-CH 600V 23A D3PAK POWER MOS 8™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-268-3, D³Pak (2 Leads + Tab), TO-268AA D3Pak 415W (Tc) N-Channel - 600V 24A (Tc) 290 mOhm @ 11A, 10V 5V @ 1mA 110nC @ 10V 4415pF @ 25V 10V ±30V
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