- Series :
- Package / Case :
- Supplier Device Package :
- Power Dissipation (Max) :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
2 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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1,759
Ships today + free overnight shipping
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Infineon Technologies | MOSFET N-CH 40V 40A TSDSON-8 | OptiMOS™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | PG-TSDSON-8 | 2.1W (Ta), 35W (Tc) | N-Channel | - | 40V | 11A (Ta), 40A (Tc) | 10.5 mOhm @ 20A, 10V | 4V @ 14µA | 17nC @ 10V | 1300pF @ 20V | 10V | ±20V | |||
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1,612
Ships today + free overnight shipping
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Infineon Technologies | MOSFET N-CH 60V 40A 8-PQFN | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-PQFN (5x6) | 3.6W (Ta) | N-Channel | - | 60V | 11A (Ta), 40A (Tc) | 14.4 mOhm @ 24A, 10V | 4V @ 50µA | 35nC @ 10V | 1256pF @ 25V | 10V | ±20V |
