Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Input Capacitance (Ciss) (Max) @ Vds :
2 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK MANUFACTURE DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
TPN5900CNH,L1Q
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RFQ
2,081
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Toshiba Semiconductor and Storage MOSFET N-CH 150V 9A 8TSON U-MOSVIII-H Active Digi-Reel® MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-PowerVDFN 8-TSON Advance (3.3x3.3) 700mW (Ta), 39W (Tc) N-Channel - 150V 9A (Ta) 59 mOhm @ 4.5A, 10V 4V @ 200µA 7nC @ 10V 600pF @ 75V 10V ±20V
TPN2010FNH,L1Q
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2,825
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Toshiba Semiconductor and Storage MOSFET N-CH 250V 5.6A 8TSON U-MOSVIII-H Active Digi-Reel® MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-PowerVDFN 8-TSON Advance (3.3x3.3) 700mW (Ta), 39W (Tc) N-Channel - 250V 5.6A (Ta) 198 mOhm @ 2.8A, 10V 4V @ 200µA 7nC @ 10V 600pF @ 100V 10V ±20V
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