- Series :
- Operating Temperature :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
-
- 1.2 mOhm @ 80A, 10V (1)
- 11.4 mOhm @ 8.5A, 10V (1)
- 13.3 mOhm @ 9A, 10V (1)
- 16 mOhm @ 8.5A, 10V (1)
- 198 mOhm @ 2.8A, 10V (1)
- 2.2 mOhm @ 22.5A, 10V (1)
- 2.3 mOhm @ 40A, 10V (1)
- 2.7 mOhm @ 22.5A, 10V (1)
- 22 mOhm @ 4.5A, 10V (1)
- 3.7 mOhm @ 40A, 10V (1)
- 30 mOhm @ 4.8A, 10V (1)
- 33 mOhm @ 4.7A, 10V (1)
- 4.2 mOhm @ 11.5A, 10V (1)
- 4.3 mOhm @ 20A, 10V (1)
- 59 mOhm @ 4.5A, 10V (1)
- 6 mOhm @ 13.5A, 10V (1)
- 7.5 mOhm @ 13A, 10V (1)
- 8.9 mOhm @ 10A, 10V (1)
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
18 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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2,081
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Toshiba Semiconductor and Storage | MOSFET N-CH 150V 9A 8TSON | U-MOSVIII-H | Active | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-TSON Advance (3.3x3.3) | 700mW (Ta), 39W (Tc) | N-Channel | - | 150V | 9A (Ta) | 59 mOhm @ 4.5A, 10V | 4V @ 200µA | 7nC @ 10V | 600pF @ 75V | 10V | ±20V | ||
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2,196
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Toshiba Semiconductor and Storage | MOSFET N-CH 60V 17A 8TSON | U-MOSVIII-H | Active | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-TSON Advance (3.3x3.3) | 700mW (Ta), 30W (Tc) | N-Channel | - | 60V | 17A (Tc) | 11.4 mOhm @ 8.5A, 10V | 2.5V @ 200µA | 23nC @ 10V | 2000pF @ 30V | 4.5V, 10V | ±20V | ||
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1,376
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Toshiba Semiconductor and Storage | MOSFET N-CH 30V 45A 8-TSON | U-MOSVIII | Active | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-TSON Advance (3.3x3.3) | 700mW (Ta), 42W (Tc) | N-Channel | - | 30V | 45A (Tc) | 2.2 mOhm @ 22.5A, 10V | 2.3V @ 500µA | 34nC @ 10V | 2230pF @ 15V | 10V | ±20V | ||
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1,397
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Toshiba Semiconductor and Storage | MOSFET N CH 30V 23A 8TSON-ADV | U-MOSVIII | Active | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-TSON Advance (3.3x3.3) | 700mW (Ta), 22W (Tc) | N-Channel | - | 30V | 23A (Ta) | 4.2 mOhm @ 11.5A, 10V | 2.3V @ 200µA | 24nC @ 10V | 1370pF @ 15V | 4.5V, 10V | ±20V | ||
|
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3,090
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Toshiba Semiconductor and Storage | MOSFET N-CH 30V 20A TSON | U-MOSVIII-H | Active | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-TSON Advance (3.3x3.3) | 700mW (Ta), 22W (Tc) | N-Channel | - | 30V | 20A (Tc) | 8.9 mOhm @ 10A, 10V | 2.3V @ 100µA | 9.8nC @ 4.5V | 820pF @ 15V | 4.5V, 10V | ±20V | ||
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2,644
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Toshiba Semiconductor and Storage | MOSFET N-CH 80V 9.6A 8TSON | U-MOSVIII-H | Active | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-TSON Advance (3.3x3.3) | 700mW (Ta), 27W (Tc) | N-Channel | - | 80V | 9.6A (Tc) | 30 mOhm @ 4.8A, 10V | 4V @ 100µA | 11nC @ 10V | 920pF @ 40V | 10V | ±20V | ||
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3,862
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Toshiba Semiconductor and Storage | MOSFET N CH 30V 27A 8TSON-ADV | U-MOSVIII-H | Active | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-TSON Advance (3.3x3.3) | 700mW (Ta), 32W (Tc) | N-Channel | - | 30V | 27A (Tc) | 6 mOhm @ 13.5A, 10V | 2.3V @ 200µA | 17nC @ 10V | 1400pF @ 15V | 4.5V, 10V | ±20V | ||
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2,320
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Toshiba Semiconductor and Storage | MOSFET N CH 60V 9A 8-TSON | U-MOSVIII-H | Active | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-TSON Advance (3.3x3.3) | 700mW (Ta), 18W (Tc) | N-Channel | - | 60V | 9A (Ta) | 22 mOhm @ 4.5A, 10V | 4V @ 100µA | 12nC @ 10V | 710pF @ 30V | 6.5V, 10V | ±20V | ||
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742
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Toshiba Semiconductor and Storage | MOSFET N CH 100V 17A 8TSON-ADV | U-MOSVIII-H | Active | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-TSON Advance (3.3x3.3) | 700mW (Ta), 42W (Tc) | N-Channel | - | 100V | 17A (Tc) | 16 mOhm @ 8.5A, 10V | 4V @ 200µA | 19nC @ 10V | 1600pF @ 50V | 10V | ±20V | ||
|
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1,379
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Toshiba Semiconductor and Storage | X35 PB-F POWER MOSFET TRANSISTOR | U-MOSIX-H | Active | Digi-Reel® | MOSFET (Metal Oxide) | 175°C (TJ) | Surface Mount | 8-PowerVDFN | 8-TSON Advance (3.3x3.3) | 104W (Tc) | N-Channel | - | 30V | 80A (Tc) | 1.2 mOhm @ 80A, 10V | 10V @ 10µA | 41nC @ 10V | 3900pF @ 15V | 4.5V, 10V | ±20V | ||
|
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3,579
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Toshiba Semiconductor and Storage | MOSFET N-CH 60V 26A 8TSON | U-MOSVIII-H | Active | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-TSON Advance (3.3x3.3) | 700mW (Ta), 42W (Tc) | N-Channel | - | 60V | 26A (Tc) | 7.5 mOhm @ 13A, 10V | 4V @ 200µA | 22nC @ 10V | 1800pF @ 30V | 6.5V, 10V | ±20V | ||
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2,508
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Toshiba Semiconductor and Storage | MOSFET N-CH 30V 63A 8TSON | U-MOSVIII-H | Active | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-TSON Advance (3.3x3.3) | 700mW (Ta), 34W (Tc) | N-Channel | - | 30V | 40A (Tc) | 4.3 mOhm @ 20A, 10V | 2.3V @ 200µA | 14.8nC @ 10V | 1400pF @ 15V | 4.5V, 10V | ±20V | ||
|
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|
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2,825
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Toshiba Semiconductor and Storage | MOSFET N-CH 250V 5.6A 8TSON | U-MOSVIII-H | Active | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-TSON Advance (3.3x3.3) | 700mW (Ta), 39W (Tc) | N-Channel | - | 250V | 5.6A (Ta) | 198 mOhm @ 2.8A, 10V | 4V @ 200µA | 7nC @ 10V | 600pF @ 100V | 10V | ±20V | ||
|
|
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637
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Toshiba Semiconductor and Storage | MOSFET N-CH 40V 80A TSON | U-MOSIX-H | Active | Digi-Reel® | MOSFET (Metal Oxide) | 175°C | Surface Mount | 8-PowerVDFN | 8-TSON Advance (3.3x3.3) | 630mW (Ta), 86W (Tc) | N-Channel | - | 40V | 80A (Tc) | 3.7 mOhm @ 40A, 10V | 2.4V @ 0.2mA | 27nC @ 10V | 2500pF @ 20V | 4.5V, 10V | ±20V | ||
|
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|
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1,940
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|
Toshiba Semiconductor and Storage | MOSFET N-CH 30V 45A 8-TSON | U-MOSVIII-H | Active | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-TSON Advance (3.3x3.3) | 700mW (Ta), 42W (Tc) | N-Channel | - | 30V | 45A (Tc) | 2.7 mOhm @ 22.5A, 10V | 2.3V @ 300µA | 21nC @ 10V | 2100pF @ 15V | 4.5V, 10V | ±20V | ||
|
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1,821
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Toshiba Semiconductor and Storage | MOSFET N-CH 80V 40A 8TSON | U-MOSVIII-H | Active | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-TSON Advance (3.3x3.3) | 700mW (Ta), 42W (Tc) | N-Channel | - | 80V | 18A (Tc) | 13.3 mOhm @ 9A, 10V | 4V @ 200µA | 18nC @ 10V | 1600pF @ 40V | 10V | ±20V | ||
|
|
|
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2,511
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Toshiba Semiconductor and Storage | MOSFET N-CH 100V 9.4A 8TSON | U-MOSVIII-H | Active | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-TSON Advance (3.3x3.3) | 700mW (Ta), 27W (Tc) | N-Channel | - | 100V | 9.4A (Tc) | 33 mOhm @ 4.7A, 10V | 4V @ 100µA | 11nC @ 10V | 880pF @ 50V | 10V | ±20V | ||
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1,678
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Toshiba Semiconductor and Storage | MOSFET N-CH 40V 80A TSON | U-MOSIX-H | Active | Digi-Reel® | MOSFET (Metal Oxide) | 175°C | Surface Mount | 8-PowerVDFN | 8-TSON Advance (3.3x3.3) | 630mW (Ta), 104W (Tc) | N-Channel | - | 40V | 80A (Tc) | 2.3 mOhm @ 40A, 10V | 2.4V @ 0.3mA | 41nC @ 10V | 3600pF @ 20V | 4.5V, 10V | ±20V |
