9 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK MANUFACTURE DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
TPN11006NL,LQ
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2,196
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Toshiba Semiconductor and Storage MOSFET N-CH 60V 17A 8TSON U-MOSVIII-H Active Digi-Reel® MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-PowerVDFN 8-TSON Advance (3.3x3.3) 700mW (Ta), 30W (Tc) N-Channel - 60V 17A (Tc) 11.4 mOhm @ 8.5A, 10V 2.5V @ 200µA 23nC @ 10V 2000pF @ 30V 4.5V, 10V ±20V
TPN4R203NC,L1Q
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1,397
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Toshiba Semiconductor and Storage MOSFET N CH 30V 23A 8TSON-ADV U-MOSVIII Active Digi-Reel® MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-PowerVDFN 8-TSON Advance (3.3x3.3) 700mW (Ta), 22W (Tc) N-Channel - 30V 23A (Ta) 4.2 mOhm @ 11.5A, 10V 2.3V @ 200µA 24nC @ 10V 1370pF @ 15V 4.5V, 10V ±20V
TPN8R903NL,LQ
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3,090
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Toshiba Semiconductor and Storage MOSFET N-CH 30V 20A TSON U-MOSVIII-H Active Digi-Reel® MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-PowerVDFN 8-TSON Advance (3.3x3.3) 700mW (Ta), 22W (Tc) N-Channel - 30V 20A (Tc) 8.9 mOhm @ 10A, 10V 2.3V @ 100µA 9.8nC @ 4.5V 820pF @ 15V 4.5V, 10V ±20V
TPN6R003NL,LQ
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3,862
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Toshiba Semiconductor and Storage MOSFET N CH 30V 27A 8TSON-ADV U-MOSVIII-H Active Digi-Reel® MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-PowerVDFN 8-TSON Advance (3.3x3.3) 700mW (Ta), 32W (Tc) N-Channel - 30V 27A (Tc) 6 mOhm @ 13.5A, 10V 2.3V @ 200µA 17nC @ 10V 1400pF @ 15V 4.5V, 10V ±20V
TPN1R603PL,L1Q
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1,379
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Toshiba Semiconductor and Storage X35 PB-F POWER MOSFET TRANSISTOR U-MOSIX-H Active Digi-Reel® MOSFET (Metal Oxide) 175°C (TJ) Surface Mount 8-PowerVDFN 8-TSON Advance (3.3x3.3) 104W (Tc) N-Channel - 30V 80A (Tc) 1.2 mOhm @ 80A, 10V 10V @ 10µA 41nC @ 10V 3900pF @ 15V 4.5V, 10V ±20V
TPN4R303NL,L1Q
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2,508
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Toshiba Semiconductor and Storage MOSFET N-CH 30V 63A 8TSON U-MOSVIII-H Active Digi-Reel® MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-PowerVDFN 8-TSON Advance (3.3x3.3) 700mW (Ta), 34W (Tc) N-Channel - 30V 40A (Tc) 4.3 mOhm @ 20A, 10V 2.3V @ 200µA 14.8nC @ 10V 1400pF @ 15V 4.5V, 10V ±20V
TPN3R704PL,L1Q
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637
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Toshiba Semiconductor and Storage MOSFET N-CH 40V 80A TSON U-MOSIX-H Active Digi-Reel® MOSFET (Metal Oxide) 175°C Surface Mount 8-PowerVDFN 8-TSON Advance (3.3x3.3) 630mW (Ta), 86W (Tc) N-Channel - 40V 80A (Tc) 3.7 mOhm @ 40A, 10V 2.4V @ 0.2mA 27nC @ 10V 2500pF @ 20V 4.5V, 10V ±20V
TPN2R703NL,L1Q
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1,940
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Toshiba Semiconductor and Storage MOSFET N-CH 30V 45A 8-TSON U-MOSVIII-H Active Digi-Reel® MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-PowerVDFN 8-TSON Advance (3.3x3.3) 700mW (Ta), 42W (Tc) N-Channel - 30V 45A (Tc) 2.7 mOhm @ 22.5A, 10V 2.3V @ 300µA 21nC @ 10V 2100pF @ 15V 4.5V, 10V ±20V
TPN2R304PL,L1Q
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1,678
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Toshiba Semiconductor and Storage MOSFET N-CH 40V 80A TSON U-MOSIX-H Active Digi-Reel® MOSFET (Metal Oxide) 175°C Surface Mount 8-PowerVDFN 8-TSON Advance (3.3x3.3) 630mW (Ta), 104W (Tc) N-Channel - 40V 80A (Tc) 2.3 mOhm @ 40A, 10V 2.4V @ 0.3mA 41nC @ 10V 3600pF @ 20V 4.5V, 10V ±20V
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