SSM6N35AFE,LF

Manufacturer :

Toshiba Semiconductor and Storage

Product Category :

Transistors - FETs, MOSFETs - Arrays

Current - Continuous Drain (Id) @ 25°C :

250mA (Ta)

Drain to Source Voltage (Vdss) :

2000V (2kV)

FET Feature :

Standard

FET Type :

2 N-Channel (Dual)

Gate Charge (Qg) (Max) @ Vgs :

0.34nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds :

36pF @ 10V

Mounting Type :

Surface Mount

Operating Temperature :

150°C

Package / Case :

SOT-563, SOT-666

Packaging :

Cut Tape (CT)

Part Status :

Active

Power - Max :

250mW

Rds On (Max) @ Id, Vgs :

1.1 Ohm @ 150mA, 4.5V

Series :

-

Supplier Device Package :

ES6

Vgs(th) (Max) @ Id :

1V @ 100µA