SIZ900DT-T1-GE3

Manufacturer :

Vishay Siliconix

Product Category :

Transistors - FETs, MOSFETs - Arrays

Current - Continuous Drain (Id) @ 25°C :

24A, 28A

Drain to Source Voltage (Vdss) :

30V

FET Feature :

Logic Level Gate

FET Type :

2 N-Channel (Half Bridge)

Gate Charge (Qg) (Max) @ Vgs :

45nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

1830pF @ 15V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

6-PowerPair™

Packaging :

Cut Tape (CT)

Part Status :

Active

Power - Max :

48W, 100W

Rds On (Max) @ Id, Vgs :

7.2 mOhm @ 19.4A, 10V

Series :

TrenchFET®

Supplier Device Package :

6-PowerPair™

Vgs(th) (Max) @ Id :

2.4V @ 250µA