SIZ998DT-T1-GE3

Manufacturer :

Vishay Siliconix

Product Category :

Transistors - FETs, MOSFETs - Arrays

Current - Continuous Drain (Id) @ 25°C :

20A (Tc), 60A (Tc)

Drain to Source Voltage (Vdss) :

30V

FET Feature :

Standard

FET Type :

2 N-Channel (Dual), Schottky

Gate Charge (Qg) (Max) @ Vgs :

8.1nC @ 4.5V, 19.8nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds :

930pF @ 15V, 2620pF @ 15V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

8-PowerWDFN

Packaging :

Tape & Reel (TR)

Part Status :

Active

Power - Max :

20.2W, 32.9W

Rds On (Max) @ Id, Vgs :

6.7 mOhm @ 15A, 10V, 2.8 mOhm @ 19A, 10V

Series :

TrenchFET®

Supplier Device Package :

8-PowerPair®

Vgs(th) (Max) @ Id :

2.2V @ 250µA